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SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 3 - JANUARY 1996 7 FEATURES * Compact geometry * Fast switching speeds * No secondary breakdown and Excellent temperature stability * High input impedance and low current drive * Ease of parralleling
ZVN4206G
D
S D G
APPLICATIONS * DC-DC converters * Solenoid / relay drivers for automotive applications * Stepper motor drivers and Print head drivers PARTMARKING DETAIL ZVN4206
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25C Pulsed Drain Current Gate-Source Voltage Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE 60 1 8 20 2 -55 to +150 UNIT V A A V W C
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ZVN4206G
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER SYMBOL MIN. 60 1.3 3 100 10 100 3 1 1.5 300 100 60 20 8 12 12 15 MAX. UNIT CONDITIONS. V V nA A A A mS pF pF pF ns ns ns ns VDD 25V, ID=1.5A, VGEN =10V VDS=25V, VGS=0V, f=1MHz ID=1mA, VGS=0V ID=1mA, VDS= VGS VGS= 20V, VDS=0V VDS=60V, VGS=0V VDS=48V, VGS=0V, T=125C(2) VDS=25V, VGS=10V VGS=10V, ID=1.5A VGS=5V, ID=0.5A VDS=25V,ID=1.5A Drain-Source Breakdown Voltage BV DSS Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current (1) Static Drain-Source On-State Resistance (1) VGS(th) IGSS IDSS ID(on) RDS(on)
Forward Transconductance (1)(2) gfs Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) Ciss Coss Crss td(on) tr td(off) tf
(1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
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ZVN4206G
TYPICAL CHARACTERISTICS
10 VGS= 20V 16V 14V 12V 10V 9V 8V 7V 2 6V 5V 4.5V 4V 3.5V 50 10 VGS= 20V 16V 14V 12V 10V 9V 8V 7V 6V 5V 4.5V 4V 3.5V 10
ID - Drain Current (Amps)
6
ID - Drain Current (Amps)
8
8 6
4
4
2
0 0 10 20 30 40
0 2 4 6 8
VDS - Drain Source Voltage (Volts)
VDS - Drain Source Voltage (Volts)
Output Characteristics
Saturation Characteristics
VDS-Drain Source Voltage (Volts)
10
ID - Drain Current (Amps)
6 VDS=10V 4
8 6
4 ID= 3A 1.5A 0.5A 0 2 4 6 8 10
2
2
0
0 0 2 4 6 8 10
VGS-Gate Source Voltage (Volts)
VGS-Gate Source Voltage (Volts)
Voltage Saturation Characteristics
RDS(on)-Drain Source On Resistance ()
Transfer Characteristics
VGS=3.5V 10
4.5V
6V
8V 10V 2.6
Normalised RDS(on) and VGS(th)
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25
n) (o
VGS=10V ID=1.5A
14V 1.0 20V
e eR rc ou -S ain Dr
eR nc ta sis
DS
VGS=VDS ID=1mA
Gate Threshold Voltage VGS(TH)
0 25 50 75 100 125 150 175 200 225
0.1 0.1 1.0 10
ID-Drain Current (Amps)
Tj-Junction Temperature (C)
On-resistance v drain current
Normalised RDS(on) and VGS(th) v Temperature
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ZVN4206G
TYPICAL CHARACTERISTICS
1000 1000
gfs-Transconductance (mS)
700 600 500 400 300 200 100 0 0 1 2 3
gfs-Transconductance (mS)
900 800 VDS=10V
900 800 700 600 500 400 300 200 100 0 0 1 2 3 4 5 6 7 8 9 10 VDS=10V
4
5
6
7
8
9
10
ID- Drain Current (Amps)
VGS-Gate Source Voltage (Volts)
Transconductance v drain current
Transconductance v gate-source voltage
VDS= 20V 40V 60V ID=1.5A
VGS-Gate Source Voltage (Volts)
200
16 14 12 10 8 6 4 2 0
C-Capacitance (pF)
160 120 80 40 0 0 10 20 30 40 50
Ciss Coss Crss 60 70 80
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VDS-Drain Source Voltage (Volts)
Q-Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
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